IS61WV6416BLL
FEATURES
• High-speed access time:
12 ns: 3.3V + 10%
15 ns: 2.5V-3.6V
• CMOS low power operation:
50 mW (typical) operating
25 μW (typical) standby
• TTL compatible interface levels
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Automotive Temperature Available
• Lead-free available
DESCRIPTION
The ISSI IS61/64WV6416BLL is a high-speed, 1,048,576-
bit static RAM organized as 65,536 words by 16 bits. It is
fabricated using ISSI's high-performance CMOS
technology. This highly reliable process coupled with innovative
circuit design techniques, yields access times as
fast as 12ns (3.3V + 10%) and 15ns (2.5V-3.6V) with low
power consumption.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.
The IS61/64WV6416BLL is packaged in the JEDEC standard
44-pin TSOP-II, 44-pin 400-mil SOJ, and 48-pin mini
BGA (6mm x 8mm).
