IS64LV6416L
FEATURES
• High-speed access time: 10, 12 ns
• CMOS low power operation:
250 mW (typical) operating
250 μW (typical) standby
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Temperature offerings:
Option A1: –40oC to +85oC
Option A2: –40oC to +105oC
Option A3: –40oC to +125oC
DESCRIPTION
The ISSI IS64LV6416L is a high-speed, 1,048,576-bit
static RAM organized as 65,536 words by 16 bits. It is
fabricated using ISSI's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields access times
as fast as 10 ns with low power consumption.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip
Enable and Output Enable inputs, CE and OE. The active
LOW Write Enable (WE) controls both writing and reading
of the memory. A data byte allows Upper Byte (UB) and
Lower Byte (LB) access.
The IS64LV6416L is packaged in the JEDEC standard
44-pin TSOP-II, and 48-pin mini BGA (6mm x 8mm).
