IS65WV10248DALL
FEATURES
• High-speed access time: 45ns, 55ns
• CMOS low power operation
– 30 mW (typical) operating
– 12 μW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply
– 1.65V--2.2V Vdd (62/65WV10248DALL)
– 2.4V--3.6V Vdd (62/65WV10248DBLL)
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Automotive temperature (-40oC to +125oC)
• Lead-free available
DESCRIPTION
The ISSI IS62WV10248DALL/ IS62WV10248DBLL are
high-speed, 8M bit static RAMs organized as 1M words
by 8 bits. It is fabricated using ISSI's high-performance
CMOS technology. This highly reliable process coupled
with innovative circuit design techniques, yields highperformance
and low power consumption devices.
When CS1 is HIGH (deselected) or when CS2 is low
(deselected), the device assumes a standby mode at
which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory.
The IS62WV10248DALL and IS62WV10248DBLL are
packaged in the JEDEC standard 48-pin mini BGA (9mm
x 11mm) and 44-Pin TSOP (TYPE II).
