IS66WV1M16DBLL
FEAT URES
• High-speed access time:
– 70ns (IS66WV1M16DALL/DBLL)
– 55ns (IS66WV1M16DBLL)
• CMOS low power operation
• Single power supply
– Vdd = 1.7V - 1.95V (IS66WV1M16DALL)
– Vdd = 2.5V - 3.6V (IS66WV1M16DBLL)
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Lead-free available
DESCRIPTION
The ISSI IS66WV1M16DALL/DBLL is a high-speed,
16M bit static RAMs organized as 1Mb words by 16
bits. It is fabricated using ISSI's high-performance
CMOS technology. This highly reliable process coupled
with innovative circuit design techniques, yields highperformance
and low power consumption devices.
When CS1 is HIGH (deselected) or when CS2 is low
(deselected) or when CS1 is low , CS2 is high and both
LB and UB are HIGH, the device assumes a standby mode
at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory. A
data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS66WV1M16DALL/DBLL is packaged in the JEDEC
standard 48-ball mini BGA (6mm x 8mm). The device is
also available for die sales.
